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| 2SK3597-01 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOS FET MOSFET FUJI POWER Outline Drawings (mm) O}*@-OE S OUT VIEW Fig.1 oQAE* Z}* i- MARKING *\Z|"a--e Fig.1 o}*Zi- Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range 2 DIMENSIONS ARE IN MILLIMETERS. MARKING Trademark Note:1. Dimension shown in ( ) is reference values. j* ' P.*iQl* l'B jIZ*@ -a*" e** AE "a*\Z|--e *W Special specification for customer Symbol VDS VDSX *5 ID Tc=25C Ta=25C ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Tc=25C Ta=25C Tch Tstg Ratings 200 170 30 4.3 ** 120 30 30 387 20 5 135 2.4 +150 -55 to +150 2 Unit V V A A A V A mJ kV/s kV/s W C C CONNECTION 11 G : : Gate G Gate OE*u} D "AZe*iL* Lot No. *bgNo. Type name 22 S1 : : Source1 S1 Source1 33 S2 : : Source2 S2 Source2 44 D : : Drain G D Drain S1 S2 OE-1/4 Equivalent circuit schematic D : Drain G : Gate S1 : Source S2 : Source ** Surface mounted on 1000mm , t=1.6mm FR-4 PCB(Drain pad area : 500mm ) *1 L=689H, Vcc=48V *2 Tch< 150C *3 IF < -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C = = = = *4 VDS < 200V *5 VGS=-30V = Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=200V VGS=0V VDS=160V VGS=0V VGS=30V VDS=0V ID=15A VGS=10V ID=15A VDS=25V VDS=75V VGS=0V f=1MHz VCC=48V ID=15A VGS=10V RGS=10 VCC=100V ID=30A VGS=10V L=100H Tch=25C IF=30A VGS=0V Tch=25C IF=30A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C Min. 200 3.0 Typ. Max. 5.0 25 250 100 66 Units V V A nA m S pF 10 50 12.5 25 1960 2940 260 390 18 27 20 30 17 26 53 80 19 29 51 76.5 15 22.5 16 24 30 1.10 1.65 0.19 1.4 ns nC A V s C Thermalcharacteristics Symbol Test Conditions Rth(ch-c) channel to case Thermal resistance Rth(ch-a) channel to ambient Rth(ch-a) ** channel to ambient ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) Item Min. Typ. Max. 0.926 87.0 52.0 Units C/W C/W www.fujielectric.co.jp/denshi/scd 1 2SK3597-01 Characteristics Allowable Power Dissipation PD=f(Tc) 5 FUJI POWER MOSFET 200 175 Allowable Power Dissipation PD=f(Tc) Surface mounted on 1000mm ,t=1.6mm FR-4 PCB 2 2 4 150 125 (Drain pad area : 500mm ) 3 PD [W] 100 75 50 PD [W] 0 25 50 75 100 125 150 2 1 25 0 0 0 25 50 75 100 125 150 Tc [C] Tc [C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=30A 500 120 Typical Output Characteristics ID=f(VDS):80s Pulse test,Tch=25C 20V 100 400 80 10V 8V 7.5V EAV [mJ] ID [A] 300 60 7.0V 200 40 6.5V 6.0V 20 VGS=5.5V 0 0 25 50 75 100 125 150 0 0 2 4 6 8 10 12 100 starting Tch [C] VDS [V] Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 100 100 Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 10 ID[A] 10 1 gfs [S] 1 0.1 0 1 2 3 4 5 6 7 8 9 10 0.1 0.1 1 10 100 VGS[V] ID [A] 2 2SK3597-01 FUJI POWER MOSFET Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C 0.20 200 180 VGS= 6.0V 5.5V 6.5V 7.0V 160 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=15A,VGS=10V 0.15 7.5V 8V 0.10 10V 20V RDS(on) [ m ] 140 120 100 80 60 max. RDS(on) [ ] 0.05 40 20 0.00 0 20 40 60 80 100 120 0 -50 -25 0 25 typ. 50 75 100 125 150 ID [A] Tch [C] Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A 7.0 6.5 6.0 5.5 5.0 max. 10 12 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=30A, Tch=25C VGS(th) [V] 4.5 VGS [V] 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. 8 6 4 2 0 0 10 20 Vcc= 100V 30 40 50 60 70 80 Tch [C] Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 1 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s Pulse test,Tch=25C 100 Ciss 0 10 10 Coss C [nF] 10 -1 IF [A] 1 2 Crss 10 -2 10 -1 10 0 10 1 10 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VDS [V] VSD [V] 3 2SK3597-01 Typical Switching Characteristics vs. ID 10 3 FUJI POWER MOSFET t=f(ID):Vcc=48V, VGS=10V, RG=10 100 90 Thermal Resistance vs. Drain Pad area t=1.6mm FR-4 PCB Rth(ch-a) [C/W] tf 2 80 70 60 50 40 10 td(off) t [ns] td(on) 1 10 tr 30 20 10 10 0 0 -1 10 10 0 10 1 10 2 0 1000 2000 3000 2 4000 5000 ID [A] Drain Pad Area [mm ] 10 1 Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C. Vcc=48V 10 2 Avalanche current IAV [A] Single Pulse 10 1 10 0 10 -1 10 -2 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 4 |
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